field-effect transistor

美 　英

• un.場效應(yīng)晶體管
• 網(wǎng)絡(luò)場效電晶體；場效應(yīng)管；場效晶體管

英漢解釋

un.	1. 場效應(yīng)晶體管

英英解釋

n.	1. a transistor, with three or more electrodes, in which the output current is controlled by a variable electric field

例句

Further a sensor system comprising such a field-effect transistor and the use of a sensor system for detecting molecules is disclosed.

本發(fā)明還涉及一種包括這種場效應(yīng)晶體管的傳感器系統(tǒng)以及將根據(jù)本發(fā)明的傳感器系統(tǒng)用于檢測分子。

The invention provides a field effect transistor device using a carbon nano tube as an electrode and a preparation method thereof.

本發(fā)明提供一種以碳納米管為電極的場效應(yīng)晶體管器件及其制備方法。

and besides, the organic field effect transistor is small-sized, thus reducing the size and cost of detection components in application.

此外，有機場效應(yīng)晶體管的體積小，在應(yīng)用方面可以減小檢測器件的體積與成本。

tunnelling of the electrons which operate the field-effect transistor components of each on-chip CMOS device.

它操作著每個片上CMOS器件的場效應(yīng)晶體管元件。

The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.

在金屬氧化物半導(dǎo)體場效應(yīng)晶體管（MOSFET）的作品在一個類似的原則，但二極管的MOSFET內(nèi)掩埋。

The bottom plate of the capacitor 60 can be connected to Vref+via field effect transistor 61 and to ground by field effect transistor 62.

電容器60的下極板可以經(jīng)由場效應(yīng)晶體管61而連接到Vref+，并且通過場效應(yīng)晶體管62而連接到地。

The invention is applied to improving the manufacture efficiency of the field effect transistor.

本發(fā)明應(yīng)用于提高場效應(yīng)晶體管的制造效率。

Organic semiconductor material is the primary factor which differentiates OFET from traditional field-effect transistor.

有機半導(dǎo)體材料是OFET區(qū)別于傳統(tǒng)場效應(yīng)晶體管的根本所在。

A field effect transistor and a method of fabricating the field effect transistor.

場效應(yīng)晶體管以及制造場效應(yīng)晶體管的方法。

Today, ion-sensitive field effect transistor-based biosensors have been applied widely.

以ISFET為基礎(chǔ)的生物傳感器目前已經(jīng)得到了廣泛應(yīng)用。

Thus, the preparation of the organic field-effect transistor with mixed-contact electrodes is finished.

于是，混合接觸型電極的有機場效晶體管制作完成。

gallium arsenide metal semiconductor field effect transistor .

砷化鎵場效應(yīng)晶體管

The relative sensitivity of the sector split-drain field-effect transistor is studied by two methods: 1. Numerical simulation.

本文通過如下兩種方法對扇形分裂漏磁敏場效應(yīng)晶體管的相對靈敏度進行研究：一、數(shù)值模擬法。

In this paper the relative sensitivity of the sector split-drain magnetic field-effect transistor (MAGFET) has been studied.

本文的主要研究內(nèi)容是扇形分裂漏磁敏場效應(yīng)晶體管（MAGFET）相對靈敏度模型。

An apparatus includes a field-effect transistor (FET).

一種設(shè)備包括場效應(yīng)晶體管（FET）。

So silicon nanowires exhibit excellent application promising in nanoscale electron devices such as field effect transistor and memory cell.

因此，硅納米線在場效應(yīng)晶體管及存儲元件等納米器件方面具有極大的應(yīng)用前景。

Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor.

本發(fā)明的實施例涉及作為發(fā)光晶體管的縱向場效應(yīng)晶體管。

Another set of sensors, called field-effect transistor amplifiers (FET amplifier), are used to detect the ionization of the particle

另一個稱為場效應(yīng)晶體管放大器（FET放大器）的傳感器的裝置，用來探測粒子的電離化。

stripping photoresist to obtain the electrode diagram of a diagrammatic all-organic field-effect transistor device;

剝離光刻膠后得到圖形化了的全有機場效應(yīng)晶體管器件的電極圖；

The design and property study of a new NPN vertical dual carried field effect transistor

NPN型偶載場效應(yīng)晶體管的設(shè)計及特性

Analysis of Electret Microphone and Its Application Specific Field Effect Transistor

駐極體傳聲器及其專用場效應(yīng)管的穩(wěn)定性分析

Design of High Repetition Rate Electro-Optically Q-Switched Module with Vertical Metal Oxide Semiconductor Field Effect Transistor Component

用金屬氧化物半導(dǎo)體場效應(yīng)晶體管器件實現(xiàn)的高重復(fù)率電光調(diào)Q模塊設(shè)計

Simulation of Physical Mechanism for I-V Characteristics of Ferroelectric Nonvolatile Memory Field Effect Transistor

鐵電存儲場效應(yīng)晶體管I-V特性的物理機制模擬

The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation;

所述場效應(yīng)晶體管包括：硅體，所述硅體的周邊鄰接介質(zhì)絕緣物；

the gate electrode of the second enhancement type back-gate ZnO nanowire field effect transistor is connected to the second input terminal;

第二增強型背柵氧化鋅納米線場效應(yīng)晶體管，其柵電極耦接至所述第二輸入端；

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

多壁碳納米管的摻氮改性及場效應(yīng)管特性研究

Analysis of Direct Current characteristics of Double-injection Field-effect Transistor

雙注入結(jié)型場效應(yīng)晶體管直流特性分析

Unified Description About Working Principle of Insulated Gate Field-Effect Transistor

絕緣柵場效應(yīng)管工作原理的統(tǒng)一表述

gallium arsenide metal semiconductor field effect transistor(GaAs MESFET)

砷化鎵金屬化半導(dǎo)體場效應(yīng)晶體管

A Numerical Study of Organic Field Effect Transistor

有機場效應(yīng)晶體管的數(shù)值研究

Impedance Conversion Effect of Specific Field Effect Transistor for Microphone

傳聲器專用場效應(yīng)管的阻抗變換作用

Magnetic Metal-Oxide-semiconductor Type Field Effect Transistor

磁性金屬氧化物半導(dǎo)體型場效應(yīng)晶體管

Analysis and Fabrication of Light-emitting Field-effect Transistor Based on Pentacene

并五苯場效應(yīng)發(fā)光管機理分析與場效應(yīng)管制作

An Ion Field Effect Transistor Sensor for the Determination of Dioxopromethazine

離子敏感場效應(yīng)晶體管克咳敏傳感器的研究

Modeling and simulation of ion-sensitive field effect transistor

離子敏場效應(yīng)晶體管宏模型的建立與仿真

High stability sine-wave generator with field effect transistor

采用場效應(yīng)管穩(wěn)幅的高穩(wěn)定度正弦波信號源

Study on ephedrine sensor by ion sensitive field effect transistor

麻黃堿離子敏感場效應(yīng)管傳感器的研究

Chemical sensor using field effect transistor

場效應(yīng)化學(xué)傳感器

Low voltage pentacene thin film field-effect transistor

低電壓并五苯薄膜場效應(yīng)晶體管

Development of fluoride ion sensitive field effect transistor

氟離子敏場效應(yīng)管的研制